The fabrication concept employed here circumvents technological issues present in the context of conventional vertically slotted waveguide structures, since the slots with cross-sectional dimensions of about 1000 nm × 160 nm have been patterned with standard optical photolithography into thermally grown oxide sandwiched between two fusion bonded device silicon layers.
cm and 10 ± 2.4 dB / cm, respectively. The experimentally determined half-wave voltage times length product and the losses are estimated to be V π × L = 14.7 ± 2 V To the best of our knowledge, this is the first experimental realization of an electro-optically active horizontally slotted silicon waveguide and also the first demonstration of organic crystalline materials being implemented into the slotted silicon photonics technology. Note: Author names will be searched in the keywords field, also, but that may find papers where the person is mentioned, rather than papers they authored.Įlectro-optic modulation is achieved in devices consisting of single-crystalline thin films of N-benzyl-2-methyl- 4-nitroaniline grown from the melt in the slots of phase modulators based on horizontally slotted silicon waveguides. 
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